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MTB2N40E - TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS

MTB2N40E_1285500.PDF Datasheet

 
Part No. MTB2N40E MTB2N40E-D
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS

File Size 270.98K  /  10 Page  

Maker


ON Semiconductor
MOTOROLA[Motorola, Inc]



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